Point defects on III-V semiconductor surfaces
arXiv:cond-mat/0010342
Abstract
The basic properties of point defects (atomic geometry, the position of charge-transfer levels, and formation energies) on the (110) surface of GaAs, GaP, and InP have been calculated employing density-functional theory. Based on these results we discuss the electronic properties of surface defects, defect segregation, and compensation.
4 pages including figures. Submitted to Proceedings of the ICPS 25, Osaka, 17-22 September 2000. Related publications can be found at http://www.fhi-berlin.mpg.de/th/paper.html