60 citations · 121 across the 7 of their papers we have counts for
7 papers
Carrier Recombination in Highly Uniform and Phase-Pure GaAs/(Al,Ga)As Core/Shell Nanowire Arrays on Si(111): Mott Transition and Internal Quantum Efficiency
Miriam Oliva, Timur Flissikowski, Michał Góra +7
GaAs-based nanowires are among the most promising candidates for realizing a monolithical integration of III-V optoelectronics on the Si platform. To realize their full potential f…
Correlated nanoscale analysis of the emission from wurtzite versus zincblende (In,Ga)As/GaAs nanowire core-shell quantum wells
Jonas Lähnemann, Megan O. Hill, Jesús Herranz +12
While the properties of wurtzite GaAs have been extensively studied during the past decade, little is known about the influence of the crystal polytype on ternary (In,Ga)As quantum…
Optimization of ohmic contacts to n-type GaAs nanowires
Ludwig Hüttenhofer, Dionysios Xydias, Ryan B. Lewis +6
III-V nanowires are comprehensively studied because of their suitability for optoelectronic quantum technology applications. However, their small dimensions and the spatial separat…
Modelling the electronic properties of GaAs polytype nanostructures: impact of strain on the conduction band character
Oliver Marquardt, Manfred Ramsteiner, Pierre Corfdir +2
We study the electronic properties of GaAs nanowires composed of both the zincblende and wurtzite modifications using a ten-band k.p model. In the wurtzite phase, two energetically…
Influence of strain relaxation in axial (In,Ga)N/GaN nanowire heterostructures on their electronic properties
Oliver Marquardt, Thilo Krause, Vladimir Kaganer +3
We present a systematic study of the influence of elastic strain relaxation on the built-in electrostatic potentials and the electronic properties of axial (In,Ga)N/GaN nanowire he…
Quantum-Confined Stark Effect in polar and nonpolar Wurtzite InN/GaN Heterostructures: Influence on Electronic Structure and Compensation by Coulomb Attraction
Stefan Barthel, Kolja Schuh, Oliver Marquardt +4
In this paper we systematically analyze the electronic structures of polar and nonpolar wurtzite-InN/GaN quantum dots and their modification due to the quantum-confined Stark effec…