60 citations · 121 across the 7 of their papers we have counts for
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Carrier Recombination in Highly Uniform and Phase-Pure GaAs/(Al,Ga)As Core/Shell Nanowire Arrays on Si(111): Mott Transition and Internal Quantum Efficiency
Miriam Oliva, Timur Flissikowski, Michał Góra +7
GaAs-based nanowires are among the most promising candidates for realizing a monolithical integration of III-V optoelectronics on the Si platform. To realize their full potential f…
Quantum-Confined Stark Effect in polar and nonpolar Wurtzite InN/GaN Heterostructures: Influence on Electronic Structure and Compensation by Coulomb Attraction
Stefan Barthel, Kolja Schuh, Oliver Marquardt +4
In this paper we systematically analyze the electronic structures of polar and nonpolar wurtzite-InN/GaN quantum dots and their modification due to the quantum-confined Stark effec…
A comparison of atomistic and continuum theoretical approaches to determine electronic properties of GaN/AlN quantum dots
Oliver Marquardt, Daniel Mourad, Stefan Schulz +3
In this work we present a comparison of multiband k.p-models, the effective bond-orbital approach, and an empirical tight-binding model to calculate the electronic structure for th…