Interrelation of structural and electronic properties of InGaN/GaN quantum dots using an eight-band k.p model

Abstract

We present an eight-band k.p model for the calculation of the electronic structure of wurtzite semiconductor quantum dots (QDs) and its application to indium gallium nitride (InGaN) QDs formed by composition fluctuations in InGaN layers. The eight-band k.p model accounts for strain effects, piezoelectric and pyroelectricity, spin-orbit and crystal field splitting. Exciton binding energies are calculated using the self-consistent Hartree method. Using this model, we studied the electronic properties of InGaN QDs and their dependence on structural properties, i.e., their chemical composition, height, and lateral diameter. We found a dominant influence of the built-in piezoelectric and pyroelectric fields, causing a spatial separation of the bound electron and hole states and a redshift of the exciton transition energies. The single-particle energies as well as the exciton energies depend heavily on the composition and geometry of the QDs.

References in corpus (2)

• Excitonic properties of strained wurtzite and zinc-blende GaN/Al(x)Ga(1-x)N quantum dots
• Multi-excitonic complexes in single InGaN quantum dots

Cited by in corpus (15)

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• Influence of symmetry and Coulomb-correlation effects on the optical properties of nitride quantum dots
• GaN/AlN Quantum Dots for Single Qubit Emitters
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• Impact of random alloy fluctuations on the electronic and optical properties of (Al,Ga)N quantum wells: Insights from tight-binding calculations
• Origin of the Broad Lifetime Distribution of Localized Excitons in InGaN/GaN Quantum Dots
• Electronic structure of semiconductor nanostructures: A modified localization landscape theory
• Excitonic states in spherical layered quantum dots
• Polarized Emission Lines from Single InGaN/GaN Quantum Dots: Role of the Valence-band Structure of Wurtzite Group-III Nitrides
• Ground State Resonant Two-Photon Transitions in Wurtzite GaN/AlN Quantum Dots
• Efficient quantum dot $\mathbf{k}\cdot \mathbf{p}$ in wurtzite systems including spatially varying elastic and dielectric constants and smooth alloy profile