Polarization fields in nitride nanostructures: ten points to think about
arXiv:cond-mat/9908060 · doi:10.1016/S0169-4332(00)00434-7
Abstract
Macroscopic polarization, both of intrinsic and piezoelectric nature, is unusually strong in III-V nitrides, and the built in electric fields in the layers of nitride-based nanostructures, stemming from polarization changes at heterointerfaces, have a major impact on the properties of single and multiple quantum wells, high mobility transistors, and thin films. The concepts involved in the theory and applications of polarization in nitrides have encountered some resistance in the field. Here we discuss critically ten ``propositions'' aimed at clarifying the main controversial issues.
RevTeX 5 pages, 2 embedded figures
References in corpus (7)
- Spontaneous polarization and piezoelectric constants of III-V nitrides
- Effects of macroscopic polarization in III-V nitride multi-quantum-wells
- Macroscopic polarization and band offsets at nitride heterojunctions
- Spontaneous vs. piezoelectric polarization in III-V nitrides: conceptual aspects and practical consequences
- Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures
- Polarization-based calculation of the dielectric tensor of polar crystals
- Electronic dielectric constants of insulators by the polarization method