Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures

Abstract

The free-carrier screening of macroscopic polarization fields in wurtzite GaN/InGaN quantum wells lasers is investigated via a self-consistent tight-binding approach. We show that the high carrier concentrations found experimentally in nitride laser structures effectively screen the built-in spontaneous and piezoelectric polarization fields, thus inducing a ``field-free'' band profile. Our results explain some heretofore puzzling experimental data on nitride lasers, such as the unusually high lasing excitation thresholds and emission blue-shifts for increasing excitation levels.

RevTeX 4 pages, 4 figures

References in corpus (3)

• Spontaneous polarization and piezoelectric constants of III-V nitrides
• Macroscopic polarization and band offsets at nitride heterojunctions
• Polarization-based calculation of the dielectric tensor of polar crystals

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• Optical properties of self-organized wurtzite InN/GaN quantum dots: A combined atomistic tight-binding and full configuration interaction calculation
• Tuning of the Quantum-Confined Stark Effect in Wurtzite $[000\bar{1}]$ Group-III-Nitride Nanostructures by the Internal-Field-Guarded-Active-Region Design
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• Self-regulated charge transfer and band tilt in nm-scale polar GaN films
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