Optical properties of self-organized wurtzite InN/GaN quantum dots: A combined atomistic tight-binding and full configuration interaction calculation
arXiv:cond-mat/0509545 · doi:10.1063/1.2139621
Abstract
In this work we investigate the electronic and optical properties of self-assembled InN/GaN quantum dots. The one-particle states of the low-dimensional heterostructures are provided by a tight-binding model that fully includes the wurtzite crystal structure on an atomistic level. Optical dipole and Coulomb matrix elements are calculated from these one-particle wave functions and serve as an input for full configuration interaction calculations. We present multi-exciton emission spectra and discuss in detail how Coulomb correlations and oscillator strengths are changed by the piezoelectric fields present in the structure. Vanishing exciton and biexciton ground state emission for small lens-shaped dots is predicted.
3 pages, 2 figures
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Cited by in corpus (9)
- Interrelation of structural and electronic properties of InGaN/GaN quantum dots using an eight-band k.p model
- A comparison of atomistic and continuum theoretical approaches to determine electronic properties of GaN/AlN quantum dots
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- Theory of Electric Dipole Spin Resonance in a Parabolic Quantum Well
- Spin-orbit coupling and crystal-field splitting in the electronic and optical properties of nitride quantum dots with a wurtzite crystal structure
- GaAs quantum dots under quasi-uniaxial stress: experiment and theory
- Effect of doping and In-composition on gain of long wavelength III-nitride QDs
- Coulomb correlated multi-particle states of weakly confining GaAs quantum dots
- Morphology of wetting-layer states in a simple quantum-dot wetting-layer model