Spin-orbit coupling and crystal-field splitting in the electronic and optical properties of nitride quantum dots with a wurtzite crystal structure

Abstract

We present an $s{p}^3$ tight-binding model for the calculation of the electronic and optical properties of wurtzite semiconductor quantum dots (QDs). The tight-binding model takes into account strain, piezoelectricity, spin-orbit coupling and crystal-field splitting. Excitonic absorption spectra are calculated using the configuration interaction scheme. We study the electronic and optical properties of InN/GaN QDs and their dependence on structural properties, crystal-field splitting, and spin-orbit coupling.

9 pages, 6 figures

References in corpus (3)

• Excitonic properties of strained wurtzite and zinc-blende GaN/Al(x)Ga(1-x)N quantum dots
• Interrelation of structural and electronic properties of InGaN/GaN quantum dots using an eight-band k.p model
• Influence of symmetry and Coulomb-correlation effects on the optical properties of nitride quantum dots

Cited by in corpus (1)

• A comparison of atomistic and continuum theoretical approaches to determine electronic properties of GaN/AlN quantum dots