Spin-orbit coupling and crystal-field splitting in the electronic and optical properties of nitride quantum dots with a wurtzite crystal structure

Abstract

We present an $s{p}^3$ tight-binding model for the calculation of the electronic and optical properties of wurtzite semiconductor quantum dots (QDs). The tight-binding model takes into account strain, piezoelectricity, spin-orbit coupling and crystal-field splitting. Excitonic absorption spectra are calculated using the configuration interaction scheme. We study the electronic and optical properties of InN/GaN QDs and their dependence on structural properties, crystal-field splitting, and spin-orbit coupling.

9 pages, 6 figures

References in corpus (11)

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Cited by in corpus (10)

• Theory of local electric polarization and its relation to internal strain: impact on the polarization potential and electronic properties of group-III nitrides
• Multidimensional dissipative solitons and solitary vortices
• A comparison of atomistic and continuum theoretical approaches to determine electronic properties of GaN/AlN quantum dots
• Band gap bowing of binary alloys: Experimental results compared to theoretical tight-binding supercell calculations for CdZnSe
• LDA+U and tight-binding electronic structure of InN nanowires
• Vortex modes supported by spin-orbit coupling in a laser with saturable absorption
• Multiband tight-binding theory of disordered ABC semiconductor quantum dots: Application to the optical properties of alloyed CdZnSe nanocrystals
• Multiband effective bond-orbital model for nitride semiconductors with wurtzite structure
• Gap and embedded solitons in microwave-coupled binary condensates
• Spin-orbit coupling and spin relaxation of hole states in [001]- and [111]-orientedquantum dots of various geometry