Exciton-exciton interaction engineering in coupled GaN quantum dots

Abstract

We present a fully three-dimensional study of the multiexciton optical response of vertically coupled GaN-based quantum dots via a direct-diagonalization approach. The proposed analysis is crucial in understanding the fundamental properties of few-particle/exciton interactions and, more important, may play an essential role in the design/optimization of semiconductor-based quantum information processing schemes. In particular, we focus on the interdot exciton-exciton coupling, key ingredient in recently proposed all-optical quantum processors. Our analysis demonstrates that there is a large window of realistic parameters for which both biexcitonic shift and oscillator strength are compatible with such implementation schemes.

3 two-column pages, 3 figures

References in corpus (3)

• Electro-optical properties of semiconductor quantum dots: Application to quantum information processing
• Electron-hole localization in coupled quantum dots
• Field-induced Coulomb coupling in semiconductor macroatoms: application to "single-electron" quantum devices

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• Effect of perturbations on information transfer in spin chains
• Effect of confinement potential geometry on entanglement in quantum dot-based nanostructures
• All-optical single-electron read-out devices based on GaN quantum dots
• Knitting distributed cluster state ladders with spin chains
• Long-range interactions and information transfer in spin chains