All-optical single-electron read-out devices based on GaN quantum dots
arXiv:cond-mat/0211476 · doi:10.1063/1.1532546
Abstract
We study few-particle interactions in GaN-coupled quantum dots and discuss how the built-in field characteristic of these structures strongly reinforce dipole-dipole and dipole-monopole interactions. We introduce a semi-analytical model which allows for a rapid and easy estimate of the magnitude of few-particle interactions and whose predictions are closer than 10% to ``exact'' results. We apply our study to the design of an all-optical read-out device which exploits long-range dipole-monopole interactions and may be also used to monitor the charge status of a quantum dot system.
accepted for publication on Appl. Phys. Lett
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Cited by in corpus (4)
- Entanglement and density-functional theory: testing approximations on Hooke's atom
- Intrinsic electric field effects on few-particle interactions in coupled GaN quantum dots
- Measurement of Two-Qubit States by a Two-Island Single Electron Transistor
- Robustness of Charge-Qubit Cluster States to Double Quantum Point Contact Measurement