Measurement of Two-Qubit States by a Two-Island Single Electron Transistor
arXiv:cond-mat/0309648 · doi:10.1103/PhysRevB.69.115301
Abstract
We solve the master equations of two charged qubits measured by a single-electron transistor (SET) consisted of two islands. We show that in the sequential tunneling regime the SET current can be used for reading out results of quantum calculations and providing evidences of two-qubit entanglement, especially when the interaction between the two qubits is weak.
References in corpus (38)
- Entanglement of Formation of an Arbitrary State of Two Qubits
- Entanglement of a Pair of Quantum Bits
- Quantum state engineering with Josephson-junction devices
- Decoherence Free Subspaces for Quantum Computation
- Electron transport through double quantum dots
- Quantum Computers and Dissipation
- Quantum oscillations in two coupled charge qubits
- Demonstration of conditional gate operation using superconducting charge qubits
- Quantum-Information Processing with Semiconductor Macroatoms
- Microscopic derivation of rate equations for quantum transport
- Allowed and forbidden transitions in artificial hydrogen and helium atoms
- Charge echo in a Cooper-pair box
- Double Quantum Dots as Detectors of High-Frequency Quantum Noise in Mesoscopic Conductors
- Continuous quantum measurement of a double dot
- Time-dependent resonant tunneling via two discrete states
- Probing Entanglement and Non-locality of Electrons in a Double-Dot via Transport and Noise
- Continuous quantum measurement of two coupled quantum dots using a point contact: A quantum trajectory approach
- Quantum gates by coupled asymmetric quantum dots and controlled-NOT-gate operation
- Electro-optical properties of semiconductor quantum dots: Application to quantum information processing
- Dissipation and Decoherence in a Quantum Register
- Dynamics of a mesoscopic qubit under continuous quantum measurement
- Single Spin Dynamics and Decoherence in a Quantum Dot via Charge Transport
- Single Spin Measurement using Single Electron Transistors to Probe Two Electron Systems
- Spin and Polarized Current from Coulomb Blockaded Quantum Dots
- Transient current spectroscopy of a quantum dot in the Coulomb blockade regime
- Multipartite entangled states in coupled quantum dots and cavity-QED
- Dephasing due to background charge fluctuations
- Prevention of dissipation with two particles
- Non-equilibrium transport through a vertical quantum dot in the absence of spin-flip energy relaxation
- Full Frequency Back-Action Spectrum of a Single Electron Transistor during Qubit read-out
- Generation of maximum spin entanglement induced by cavity field in quantum-dot systems
- Effect of the measurement on the decay rate of a quantum system
- Quantum computation with two-level trapped cold ions beyond Lamb-Dicke limit
- Dynamics of entanglement for coherent excitonic states in a system of two coupled quantum dots and cavity QED
- Field-induced Coulomb coupling in semiconductor macroatoms: application to "single-electron" quantum devices
- All-optical single-electron read-out devices based on GaN quantum dots
- One- and two-dimensional N-qubit systems in capacitively coupled quantum dots
- Continuous measurement of entangled qubits
Cited by in corpus (10)
- Qubit measurements with a double-dot detector
- Fano-Kondo effect through two-level system based on quantum dots
- Quantum measurement characteristics of double-dot single electron transistor
- Theory of a double-dot charge detector
- Radio-frequency operation of a double-island single-electron transistor
- Measurement of two-qubit states by quantum point contacts
- Fano-Kondo effect in a two-level system with triple quantum dots: shot noise characteristics
- Steady-state solution for dark states using a three-level system in coupled quantum dots
- Robustness of Decoherence-Free States for Charge Qubits under Local Non-uniformity
- The Effect of Local Structure and Non-uniformity on Decoherence-Free States of Charge Qubits