Quantum measurement characteristics of double-dot single electron transistor

Abstract

Owing to a few unique advantages, double-dot single electron transistor has been proposed as an alternative detector for charge states. In this work, we present a further study for its signal-to-noise property, based on a full analysis of the setup configuration symmetry. It is found that the effectiveness of the double-dot detector can approach that of an ideal detector, if the symmetric capacitive coupling is taken into account. The quantum measurement efficiency is also analyzed, by comparing the measurement time with the measurement-induced dephasing time.

7 pages, 5 figures

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Cited by in corpus (10)

• Quantum mechanical approach to decoherence and relaxation generated by fluctuating environment
• Optimal post-processing for a generic single-shot qubit readout
• Full Counting statistics of level renormalization in electron transport through double quantum dots
• Coherent quantum ratchets driven by tunnel oscillations: Fluctuations and correlations
• Phase readout of a charge qubit capacitively coupled to an open double quantum dot
• Weak Measurement of Qubit Oscillations with Strong Response Detectors: Violation of the Fundamental Bound Imposed on Linear Detectors
• Non-Markovian dynamics and noise characteristics in continuous measurement of a solid-state charge qubit
• Reduced dynamics with renormalization in solid-state charge qubit measurement
• Renormalized dynamics in charge qubit measurements by a single electron transistor
• Quantum Efficiency of Charge Qubit Measurements Using a Single Electron Transistor