2 papers
cond-mat.mes-hall2004
Negative Quantum Capacitance of Carbon Nanotube Field-Effect Transistors
L. Latessa, A. Pecchia, A. Di Carlo +1
Atomistic density functional theory (DFT) calculations of the capacitance between a metallic cylindric gate and a carbon nanotube (CNT) are reported. Results stressing the predomin…
cond-mat.mtrl-sci1998
Effects of macroscopic-polarization built-in electrostatic fields in III-V nitrides multi-quantum-wells
V. Fiorentini, F. Bernardini, F. Della Sala +2
Huge built-in electric fields have been predicted to exist in wurtzite III-V nitrides thin films and multilayers. Such fields originate from heterointerface discontinuities of the…