Electronic dielectric constants of insulators by the polarization method

Abstract

We discuss a non-perturbative, technically straightforward, easy-to-use, and computationally affordable method, based on polarization theory, for the calculation of the electronic dielectric constant of insulating solids at the first principles level. We apply the method to GaAs, AlAs, InN, SiC, ZnO, GaN, AlN, BeO, LiF, PbTiO${}_3$, and CaTiO${}_3$. The predicted $\einf$'s agree well with those given by Density Functional Perturbation Theory (the reference theoretical treatment), and they are generally within less than 10 % of experiment.

RevTeX 4 pages, 2 ps figures

References in corpus (2)

• Macroscopic polarization and band offsets at nitride heterojunctions
• Polarization-based calculation of the dielectric tensor of polar crystals

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