Polarized emission lines from A- and B-type excitonic complexes in single InGaN/GaN quantum dots
arXiv:0705.3595 · doi:10.1063/1.2743893
Abstract
Cathodoluminescence measurements on single InGaN/GaN quantum dots (QDs) are reported. Complex spectra with up to five emission lines per QD are observed. The lines are polarized along the orthogonal crystal directions [1 1 -2 0] and [-1 1 0 0]. Realistic eight-band k.p electronic structure calculations show that the polarization of the lines can be explained by excitonic recombinations involving hole states which are either formed by the A or the B valence band.
accepted at Journal of Applied Physics
Cited by in corpus (4)
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- GaN/AlN Quantum Dots for Single Qubit Emitters
- Origin of the Broad Lifetime Distribution of Localized Excitons in InGaN/GaN Quantum Dots
- Polarized Emission Lines from Single InGaN/GaN Quantum Dots: Role of the Valence-band Structure of Wurtzite Group-III Nitrides