Polarized emission lines from A- and B-type excitonic complexes in single InGaN/GaN quantum dots

Abstract

Cathodoluminescence measurements on single InGaN/GaN quantum dots (QDs) are reported. Complex spectra with up to five emission lines per QD are observed. The lines are polarized along the orthogonal crystal directions [1 1 -2 0] and [-1 1 0 0]. Realistic eight-band k.p electronic structure calculations show that the polarization of the lines can be explained by excitonic recombinations involving hole states which are either formed by the A or the B valence band.

accepted at Journal of Applied Physics

References in corpus (7)

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• Ultrafast, polarized, single-photon emission from m-plane InGaN Quantum Dots on GaN nanowires
• GaN/AlN Quantum Dots for Single Qubit Emitters
• Site-controlled InGaN/GaN single-photon-emitting diode
• Blue-to-green single photons from InGaN/GaN dot-in-a-wire nanowire ordered arrays
• Origin of the Broad Lifetime Distribution of Localized Excitons in InGaN/GaN Quantum Dots
• Multiband effective bond-orbital model for nitride semiconductors with wurtzite structure
• Charge-Tunable Indium Gallium Nitride Quantum Dots
• Ordered arrays of InGaN/GaN dot-in-a-wire nanostructures as single photon emitters
• Control of single photon emitters in semiconductor nanowires by surface acoustic waves
• Polarized Emission Lines from Single InGaN/GaN Quantum Dots: Role of the Valence-band Structure of Wurtzite Group-III Nitrides