Room temperature Optical Orientation of Exciton Spin in cubic GaN/AlN quantum dots

Abstract

The optical orientation of the exciton spin in an ensemble of self-organized cubic GaN/AlN quantum dots is studied by time-resolved photoluminescence. Under a polarized quasi-resonant excitation, the luminescence linear polarization exhibits no temporal decay, even at room temperature. This demonstrates the robustness of the exciton spin polarization in these cubic nitride nanostructures, with characteristic decay times longer than 10 ns.

References in corpus (4)

• Excitonic properties of strained wurtzite and zinc-blende GaN/Al(x)Ga(1-x)N quantum dots
• Spin lifetimes of electrons injected into GaAs and GaN
• Polarized emission lines from A- and B-type excitonic complexes in single InGaN/GaN quantum dots
• Temperature dependence of polarization relaxation in semiconductor quantum dots

Cited by in corpus (6)

• Full Electrical Control of the Electron Spin Relaxation in GaAs Quantum Wells
• Theory of excitons in cubic III-V semiconductor GaAs, InAs and GaN quantum dots: fine structure and spin relaxation
• GaN/AlN Quantum Dots for Single Qubit Emitters
• Electron spin relaxation in cubic GaN quantum dots
• Temperature insensitive optical alignment of the exciton in nanowire embedded GaN Quantum Dots
• Electron Spin Dephasing and Optical Pumping of Nuclear Spins in GaN