Full Electrical Control of the Electron Spin Relaxation in GaAs Quantum Wells

Abstract

The electron spin dynamics in (111)-oriented GaAs/AlGaAs quantum wells is studied by timeresolved photoluminescence spectroscopy. By applying an external field of 50 kV/cm a two-order of magnitude increase of the spin relaxation time can be observed reaching values larger than 30 ns; this is a consequence of the electric field tuning of the spin-orbit conduction band splitting which can almost vanish when the Rashba term compensates exactly the Dresselhaus one. The measurements under transverse magnetic field demonstrate that the electron spin relaxation time for the three space directions can be tuned simultaneously with the applied electric field.

5 pages, 2 figures

References in corpus (7)

• Emergence of the persistent spin helix in semiconductor quantum wells
• Suppression of the D'yakonov-Perel' spin relaxation mechanism for all spin components in [111] zincblende quantum wells
• Oscillatory D'yakonov-Perel' spin dynamics in two dimensional electron gases
• Spin-orbit fields in asymmetric (001) quantum wells
• Detection of large magneto-anisotropy of electron spin dephasing in a high-mobility two-dimensional electron system in a $[001]$ GaAs/AlGaAs quantum well
• Room temperature Optical Orientation of Exciton Spin in cubic GaN/AlN quantum dots
• Spin relaxation in $n$-type (111) GaAs quantum wells

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• Growth Direction Dependence of the Electron Spin Dynamics in {111} GaAs Quantum Wells
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• L-valley Electron Spin Dynamics in GaAs
• Position and Spin Control by Dynamical Ultrastrong Spin-Orbit Coupling
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• Magnetic Field Effect on Electron Spin Dynamics in (110) GaAs Quantum wells
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• Optical manipulation of the Rashba effect in germanium quantum wells
• Tuning of the hole spin relaxation time in single self-assembled In${}_{1-x}$Ga${}_x$As/GaAs quantum dots by electric field
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