Anisotropic spin relaxation revealed by resonant spin amplification in (110) GaAs quantum wells
arXiv:1111.5438 · doi:10.1103/PhysRevB.85.085313
Abstract
We have studied spin dephasing in a high-mobility two-dimensional electron system (2DES), confined in a GaAs/AlGaAs quantum well grown in the [110] direction, using the resonant spin amplification (RSA) technique. From the characteristic shape of the RSA spectra, we are able to extract the spin dephasing times (SDT) for electron spins aligned along the growth direction or within the sample plane, as well as the factor. We observe a strong anisotropy in the spin dephasing times. While the in-plane SDT remains almost constant as the temperature is varied between 4 K and 50 K, the out-of-plane SDT shows a dramatic increase at a temperature of about 25 K and reaches values of about 100 ns. The SDTs at 4 K can be further increased by additional, weak above-barrier illumination. The origin of this unexpected behavior is discussed, the SDT enhancement is attributed to the redistribution of charge carriers between the electron gas and remote donors.
6 pages, 3 figures
References in corpus (10)
- Emergence of the persistent spin helix in semiconductor quantum wells
- Spin noise spectroscopy in GaAs (110) quantum wells: Access to intrinsic spin lifetimes and equilibrium electron dynamics
- Semiconductor Spin Noise Spectroscopy: Fundamentals, Accomplishments, and Challenges
- Spin coherence of holes in GaAs/AlGaAs quantum wells
- Full Electrical Control of the Electron Spin Relaxation in GaAs Quantum Wells
- Oscillatory D'yakonov-Perel' spin dynamics in two dimensional electron gases
- Detection of large magneto-anisotropy of electron spin dephasing in a high-mobility two-dimensional electron system in a GaAs/AlGaAs quantum well
- Spin dephasing and photoinduced spin diffusion in high-mobility 110-grown GaAs-AlGaAs two-dimensional electron systems
- Time-resolved and continuous-wave optical spin pumping of semiconductor quantum wells
- Gating of high-mobility two-dimensional electron gases in GaAs/AlGaAs heterostructures
Cited by in corpus (21)
- Persistent Spin Textures in Semiconductor Nanostructures
- Rashba-like spin splitting along three momentum directions in trigonal layered PtBi2
- Coherent spin dynamics of electrons and holes in semiconductor quantum wells and quantum dots under periodical optical excitation: resonant spin amplification versus spin mode-locking
- All-optical NMR in semiconductors provided by resonant cooling of nuclear spins interacting with electrons in the resonant spin amplification regime
- Electrical control of phonon mediated spin relaxation rate in semiconductor quantum dots: the Rashba vs the Dresselhaus spin-orbit couplings
- Ultrafast supercontinuum fiber-laser based pump-probe scanning MOKE microscope for the investigation of electron spin dynamics in semiconductors at cryogenic temperatures with picosecond time and micrometer spatial resolution
- Spin polarization, dephasing and photoinduced spin diffusion in (110)-grown two-dimensional electron systems
- Effect of Dresselhaus spin-orbit coupling on spin dephasing in asymmetric and macroscopically symmetric (110)-grown quantum wells
- Long-lived nanosecond spin coherence in high-mobility 2DEGs confined in double and triple quantum wells
- Hole spin relaxation in -type (111) GaAs quantum wells
- Hole spin dynamics and hole factor anisotropy in coupled quantum well systems
- Resonant optical control of the electrically-induced spin polarization by periodic excitation
- Control of Spin Relaxation Anisotropy by Spin-Orbit-Coupled Diffusive Spin Motion
- Large anisotropic spin relaxation time of exciton bound to donor states in triple quantum wells
- Electrical control of spin relaxation anisotropy during drift transport in a two-dimensional electron gas
- Tailoring multilayer quantum wells for spin devices
- Weak localization in low-symmetry quantum wells
- Spin currents of exciton polaritons in a microcavity with (110)-oriented quantum well
- Resonant spin amplification meets electron spin resonance in -GaAs
- Spin dynamics in p-doped semiconductor nanostructures subject to a magnetic field tilted from the Voigt geometry
- Optically-detected long-lived spin coherence in multilayer systems: Double and triple quantum wells