Spin coherence of holes in GaAs/AlGaAs quantum wells

Abstract

The carrier spin coherence in a p-doped GaAs/(Al,Ga)As quantum well with a diluted hole gas has been studied by picosecond pump-probe Kerr rotation with an in-plane magnetic field. For resonant optical excitation of the positively charged exciton the spin precession shows two types of oscillations. Fast oscillating electron spin beats decay with the radiative lifetime of the charged exciton of 50 ps. Long lived spin coherence of the holes with dephasing times up to 650 ps. The spin dephasing time as well as the in-plane hole g factor show strong temperature dependence, underlining the importance of hole localization at cryogenic temperatures.

5 pages, 4 figures in PostScript format

References in corpus (2)

• Optical control of spin coherence in singly charged (In,Ga)As/GaAs quantum dots
• Optical Read-Out and Initialization of an Electron Spin in a Single Quantum Dot

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• Spin interactions, relaxation and decoherence in quantum dots
• Electron spin relaxation in paramagnetic Ga(Mn)As quantum wells
• Spin dynamics of electrons and holes in InGaAs/GaAs quantum wells at milliKelvin temperatures
• Nonlinear optical spectroscopy of indirect excitons in biased coupled quantum wells
• Hole spin dynamics and hole $g$ factor anisotropy in coupled quantum well systems
• Spin dependent analysis of homogeneous and inhomogeneous exciton decoherence in magnetic fields
• Spin properties in droplet epitaxy-grown telecom quantum dots