Spin dynamics of electrons and holes in InGaAs/GaAs quantum wells at milliKelvin temperatures

Abstract

The carrier spin dynamics in a n-doped (In,Ga)As/GaAs quantum well has been studied by time-resolved Faraday rotation and ellipticity techniques in the temperature range down to 430 milliKelvin. These techniques give data with very different spectral dependencies, from which nonetheless consistent information on the spin dynamics can be obtained, in agreement with theoretical predictions. The mechanisms of long-lived spin coherence generation are discussed for the cases of trion and exciton resonant excitation. We demonstrate that carrier localization leads to a saturation of spin relaxation times at 45 ns for electrons below 4.5 K and at 2 ns for holes below 2.3 K. The underlying spin relaxation mechanisms are discussed.

8 pages, 8 figures

References in corpus (5)

• Universal behavior of the electron g-factor in GaAs/AlGaAs quantum wells
• Optical Read-Out and Initialization of an Electron Spin in a Single Quantum Dot
• Pump-Probe Faraday Rotation and Ellipticity in an Ensemble of Singly Charged Quantum Dots
• Spin coherence of a two-dimensional electron gas induced by resonant excitation of trions and excitons in CdTe/(Cd,Mg)Te quantum wells
• Spin coherence of holes in GaAs/AlGaAs quantum wells

Cited by in corpus (4)

• Effect of pump-probe detuning on the Faraday rotation and ellipticity signals of mode-locked spins in InGaAs quantum dots
• Spin dynamics of electrons and holes interacting with nuclei in MAPbI${}_3$ perovskite single crystals
• Valley-Polarized Exciton Dynamics in Exfoliated Monolayer WSe${}_2$
• Nonlinear optical spectroscopy of indirect excitons in biased coupled quantum wells