Spin dynamics of electrons in the first excited subband of a high-mobility low-density 2D electron system
arXiv:0902.3875 · doi:10.1103/PhysRevB.80.193301
Abstract
We report on time-resolved Kerr rotation measurements of spin coherence of electrons in the first excited subband of a high-mobility low-density two-dimensional electron system in a GaAs/Al0.35Ga0.65As heterostructure. While the transverse spin lifetime (T2*) of electrons decreases monotonically with increasing magnetic field, it has a non-monotonic dependence on the temperature, with a peak value of 596 ps at 36 K, indicating the effect of inter-subband electron-electron scattering on the electron spin relaxation. The spin lifetime may be long enough for potential device application with electrons in excited subbands.
References in corpus (7)
- Optical control of spin coherence in singly charged (In,Ga)As/GaAs quantum dots
- Effect of initial spin polarization on spin dephasing and electron g factor in a high-mobility two-dimensional electron system
- Spin coherence of holes in GaAs/AlGaAs quantum wells
- Spin relaxation in -type GaAs quantum wells from a full microscopic approach
- Multi-subband effect in spin dephasing in semiconductor quantum wells
- Effect of electron-electron scattering on spin dephasing in a high-mobility low-density twodimensional electron gas
- Spin Dynamics in the Second Subband of a Quasi Two Dimensional System Studied in a Single Barrier Heterostructure by Time Resolved Kerr Rotation