Multi-subband effect in spin dephasing in semiconductor quantum wells

Abstract

Multi-subband effect on spin precession and spin dephasing in $n$-type GaAs quantum wells is studied with electron-electron and electron-phonon scattering explicitly included. The effects of temperature, well width and applied electric field (in hot-electron regime) on the spin kinetics are thoroughly investigated. It is shown that due to the strong inter-subband scattering, the spin procession and the spin dephasing rate of electrons in different subbands are almost identical despite the large difference in the D'yakonov-Perel' (DP) terms of different subbands. It is also shown that for quantum wells with small well width at temperatures where only the lowest subband is occupied, the spin dephasing time increases with the temperature as well as the applied in-plane electric field until the contribution from the second subband is no longer negligible. For wide quantum wells the spin dephasing time tends to decrease with the temperature and the electric field.

6 pages, 4 figures in eps format

References in corpus (5)

• High temperature spin dephasing in n-typed GaAs quantum wells
• Efficient electron spin manipulation in a quantum well by an in-plane electric field
• Hot-electron effect in spin dephasing in $n$-type GaAs quantum wells
• Kinetics of spin coherence of electrons in an undoped semiconductor quantum well
• Decay of spin polarized hot carrier current in a quasi one-dimensional spin valve structure

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