Spin relaxation due to random Rashba spin-orbit coupling in GaAs (110) quantum wells
arXiv:0910.0066 · doi:10.1209/0295-5075/89/57001
Abstract
We investigate the spin relaxation due to the random Rashba spin-orbit coupling in symmetric GaAs (110) quantum wells from the fully microscopic kinetic spin Bloch equation approach. All relevant scatterings, such as the electron-impurity, electron--longitudinal-optical-phonon, electron--acoustic-phonon, as well as electron-electron Coulomb scatterings are explicitly included. It is shown that our calculation reproduces the experimental data by Müller {\em et al.} [Phys. Rev. Lett. {\bf 101}, 206601 (2008)] for a reasonable choice of parameter values. We also predict that the temperature dependence of spin relaxation time presents a peak in the case with low impurity density, which originates from the electron-electron Coulomb scattering.
5 pages, 2 figures, EPL in press
References in corpus (10)
- Spin noise spectroscopy in GaAs (110) quantum wells: Access to intrinsic spin lifetimes and equilibrium electron dynamics
- Spin relaxation in -type GaAs quantum wells from a full microscopic approach
- Suppression of the D'yakonov-Perel' spin relaxation mechanism for all spin components in [111] zincblende quantum wells
- Cubic Dresselhaus Spin-Orbit Coupling in 2D Electron Quantum Dots
- Symmetry and spin dephasing in (110)-grown quantum wells
- Detection of large magneto-anisotropy of electron spin dephasing in a high-mobility two-dimensional electron system in a GaAs/AlGaAs quantum well
- Multi-subband effect in spin dephasing in semiconductor quantum wells
- Effect of electron-electron scattering on spin dephasing in a high-mobility low-density twodimensional electron gas
- Density dependence of spin relaxation in GaAs quantum well at room temperature
- A virtual intersubband spin-flip spin-orbit coupling induced spin relaxation in GaAs (110) quantum wells
Cited by in corpus (15)
- Spin dynamics in semiconductors
- Semiconductor Spin Noise Spectroscopy: Fundamentals, Accomplishments, and Challenges
- Electron spin relaxation in graphene with random Rashba field: Comparison of D'yakonov-Perel' and Elliott-Yafet--like mechanisms
- Electron spin relaxation due to D'yakonov-Perel' and Elliot-Yafet mechanisms in monolayer MoS: Role of intravalley and intervalley processes
- Spin-orbit interaction in GaAs wells: From one to two subbands
- Duality of the spin and density dynamics for two-dimensional electrons with a spin-orbit coupling
- Spin dephasing and photoinduced spin diffusion in high-mobility 110-grown GaAs-AlGaAs two-dimensional electron systems
- Spin relaxation in multiple (110) quantum wells
- Spin relaxation in -type (111) GaAs quantum wells
- Spin polarization, dephasing and photoinduced spin diffusion in (110)-grown two-dimensional electron systems
- Effect of Dresselhaus spin-orbit coupling on spin dephasing in asymmetric and macroscopically symmetric (110)-grown quantum wells
- Hole spin relaxation in -type (111) GaAs quantum wells
- Electron spin relaxation in rippled graphene with low mobilities
- Anomalous D'yakonov-Perel' spin relaxation in InAs (110) quantum wells under strong magnetic field: role of Hartree-Fock self-energy
- Nonlinear spin Hall effect in GaAs (110) quantum wells