Spin relaxation in multiple (110) quantum wells

Abstract

We consider theoretically the relaxation of electron spin component parallel to the growth direction in multiple (110) GaAs quantum wells. The sources of spin relaxation are the random Rashba spin-orbit coupling due to the electric field of donors and spin-flip collisions of electrons from different quantum wells. We show that the screening of the Coulomb forces at low temperatures leads to a very strong enhancement of the spin relaxation time. In a degenerate electron gas the Pauli blocking suppresses the electron-electron collisions, and the leading spin relaxation mechanism comes from the field of donors. If the electron gas is nondegenerate the electron-electron collisions and scattering by the ionized donors give similar contributions to the relaxation rate.

7 pages, 5 figures (updated version)

References in corpus (11)

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Cited by in corpus (13)

• Spin dynamics in semiconductors
• Persistent Spin Textures in Semiconductor Nanostructures
• Semiconductor Spin Noise Spectroscopy: Fundamentals, Accomplishments, and Challenges
• Duality of the spin and density dynamics for two-dimensional electrons with a spin-orbit coupling
• Anisotropic spin relaxation revealed by resonant spin amplification in (110) GaAs quantum wells
• Robust to impurity-scattering spin Hall effect in two-dimensional electron gas
• Relaxation mechanisms of the persistent spin helix
• Electron g-Factor Anisotropy in Symmetric (110)-oriented GaAs Quantum Wells
• Effect of Dresselhaus spin-orbit coupling on spin dephasing in asymmetric and macroscopically symmetric (110)-grown quantum wells
• Spin current generation from Coulomb-Rashba interaction in semiconductor bilayers
• Spin drift-diffusion for two-subband quantum wells
• Analytic model of effective screened Coulomb interactions in a multilayer system
• Electron g-factor determined for quantum dot circuit fabricated from (110)-oriented GaAs quantum well