Symmetry and spin dephasing in (110)-grown quantum wells

Abstract

Symmetry and spin dephasing of in (110)-grown GaAs quantum wells (QWs) are investigated applying magnetic field induced photogalvanic effect (MPGE) and time-resolved Kerr rotation. We show that MPGE provides a tool to probe the symmetry of (110)-grown quantum wells. The photocurrent is only observed for asymmetric structures but vanishes for symmetric QWs. Applying Kerr rotation we prove that in the latter case the spin relaxation time is maximal, therefore these structures set upper limit of spin dephasing in GaAs QWs. We also demonstrate that structure inversion asymmetry can be controllably tuned to zero by variation of delta-doping layer position.

4 pages, 4 figures

References in corpus (1)

• Rashba and Dresselhaus Spin-Splittings in Semiconductor Quantum Wells Measured by Spin Photocurrents

Cited by in corpus (10)

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• Spin relaxation and combined resonance in two-dimensional electron systems with spin-orbit disorder
• Duality of the spin and density dynamics for two-dimensional electrons with a spin-orbit coupling
• Spin dephasing and photoinduced spin diffusion in high-mobility 110-grown GaAs-AlGaAs two-dimensional electron systems
• Spin-orbit interaction and spin relaxation in a two-dimensional electron gas
• A virtual intersubband spin-flip spin-orbit coupling induced spin relaxation in GaAs (110) quantum wells
• Weak localization in low-symmetry quantum wells
• Electron g-factor determined for quantum dot circuit fabricated from (110)-oriented GaAs quantum well