Symmetry and spin dephasing in (110)-grown quantum wells
arXiv:0712.1704 · doi:10.1103/PhysRevLett.100.176806
Abstract
Symmetry and spin dephasing of in (110)-grown GaAs quantum wells (QWs) are investigated applying magnetic field induced photogalvanic effect (MPGE) and time-resolved Kerr rotation. We show that MPGE provides a tool to probe the symmetry of (110)-grown quantum wells. The photocurrent is only observed for asymmetric structures but vanishes for symmetric QWs. Applying Kerr rotation we prove that in the latter case the spin relaxation time is maximal, therefore these structures set upper limit of spin dephasing in GaAs QWs. We also demonstrate that structure inversion asymmetry can be controllably tuned to zero by variation of delta-doping layer position.
arXiv comment4 pages, 4 figures
References in corpus (6)
- Rashba and Dresselhaus Spin-Splittings in Semiconductor Quantum Wells Measured by Spin Photocurrents
- Anomalous Spin Dephasing in (110) GaAs Quantum Wells: Anisotropy and Intersubband Effects
- High temperature gate control of quantum well spin memory
- Zero-bias spin separation
- Magneto-Gyrotropic Photogalvanic Effects in Semiconductor Quantum Wells
- Pure spin currents induced by spin-dependent scattering processes in SiGe quantum well structures
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- Effect of Dresselhaus spin-orbit coupling on spin dephasing in asymmetric and macroscopically symmetric (110)-grown quantum wells
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