Magneto-gyrotropic photogalvanic effect and spin dephasing in (110)-grown GaAs/AlGaAs quantum well structures
arXiv:0903.3662 · doi:10.1103/PhysRevB.79.245329
Abstract
We report on the magneto-gyrotropic photogalvanic effect (MPGE) in n-doped (110)-grown GaAs/AlGaAs quantum-well (QW) structures caused by free-carrier absorption of terahertz radiation in the presence of a magnetic field. The photocurrent behavior upon variation of the radiation polarization state, magnetic field orientation and temperature is studied. The developed theory of MPGE describes well all experimental results. It is demonstrated that the structure inversion asymmetry can be controllably tuned to zero by variation of the delta-doping layer positions. For the in-plane magnetic field the photocurrent is only observed in asymmetric structures but vanishes in symmetrically doped QWs. Applying time-resolved Kerr rotation and polarized luminescence we investigate the spin relaxation in QWs for various excitation levels. Our data confirm that in symmetrically doped QWs the spin relaxation time is maximal, therefore, these structures set the upper limit of spin dephasing in GaAs/AlGaAs QWs.
11 pages, 12 figures
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- Effect of Dresselhaus spin-orbit coupling on spin dephasing in asymmetric and macroscopically symmetric (110)-grown quantum wells
- A virtual intersubband spin-flip spin-orbit coupling induced spin relaxation in GaAs (110) quantum wells
- Terahertz radiation-induced conductivity, Kerr and Faraday angles, and spin textures in a two-dimensional electron gas with spin-orbit coupling subjected to a high magnetic field and periodic potential
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- Nonlinear intensity dependence of ratchet currents induced by terahertz laser radiation in bilayer graphene with asymmetric periodic grating gates
- THz ratchet effect in HgTe interdigitated structures
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