Spin dephasing and photoinduced spin diffusion in high-mobility 110-grown GaAs-AlGaAs two-dimensional electron systems
arXiv:1105.2739 · doi:10.1103/PhysRevB.83.241306
Abstract
We have studied spin dephasing and spin diffusion in a high-mobility two-dimensional electron system, embedded in a GaAs/AlGaAs quantum well grown in the [110] direction, by a two-beam Hanle experiment. For very low excitation density, we observe spin lifetimes of more than 16 ns, which rapidly decrease as the pump intensity is increased. Two mechanisms contribute to this decrease: the optical excitation produces holes, which lead to a decay of electron spin via the Bir-Aranov-Pikus mechanism and recombination with spin-polarized electrons. By scanning the distance between the pump and probe beams, we observe the diffusion of spin-polarized electrons over more than 20 microns. For high pump intensity, the spin polarization in a distance of several microns from the pump beam is larger than at the pump spot, due to the reduced influence of photogenerated holes.
4 pages, 3 figures
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- Spatiotemporal spin fluctuations caused by spin-orbit-coupled Brownian motion
- Ultrafast supercontinuum fiber-laser based pump-probe scanning MOKE microscope for the investigation of electron spin dynamics in semiconductors at cryogenic temperatures with picosecond time and micrometer spatial resolution
- Spin polarization, dephasing and photoinduced spin diffusion in (110)-grown two-dimensional electron systems
- Gate-Control of Anisotropic Spin Transport and Spin Helix Dynamics in a Modulation-Doped GaAs Quantum Well
- Effect of Dresselhaus spin-orbit coupling on spin dephasing in asymmetric and macroscopically symmetric (110)-grown quantum wells
- Spin splitting of electron states in lattice-mismatched (110)-oriented quantum wells
- Electric control of spin transport in GaAs (111) quantum wells
- Magnetic Field Effect on Electron Spin Dynamics in (110) GaAs Quantum wells
- Electron spin dephasing in two-dimensional systems with anisotropic scattering
- Nonlinear spin Hall effect in GaAs (110) quantum wells
- Luminescence imaging of photoelectron spin precession during drift in p-type GaAs