Spin relaxation of conduction electrons in (110)-grown quantum wells

Abstract

The theory of spin relaxation of conduction electrons is developed for zinc-blende-type quantum wells grown on (110)-oriented substrate. It is shown that, in asymmetric structures, the relaxation of electron spin initially oriented along the growth direction is characterized by two different lifetimes and leads to the appearance of an in-plane spin component. The magnitude and sign of the in-plane component are determined by the structure inversion asymmetry of the quantum well and can be tuned by the gate voltage. In an external magnetic field, the interplay of cyclotron motion of carriers and the Larmor precession of electron spin can result in a nonmonotonic dependence of the spin density on the magnetic field.

5 pages, 3 figures

References in corpus (12)

• Giant Spin Relaxation Anisotropy in Zinc-Blende Heterostructures
• Anomalous Spin Dephasing in (110) GaAs Quantum Wells: Anisotropy and Intersubband Effects
• High temperature gate control of quantum well spin memory
• Spin noise spectroscopy in GaAs (110) quantum wells: Access to intrinsic spin lifetimes and equilibrium electron dynamics
• Origin of enhanced dynamic nuclear polarization and all-optical nuclear magnetic resonance in GaAs quantum wells
• Observation of Spin Relaxation Anisotropy in Semiconductor Quantum Wells
• Suppression of the D'yakonov-Perel' spin relaxation mechanism for all spin components in [111] zincblende quantum wells
• Symmetry and spin dephasing in (110)-grown quantum wells
• Anisotropic spin splitting and spin relaxation in asymmetric zinc-blende semiconductor quantum structures
• Magnetic field effects on spin relaxation in heterostructures
• Detection of large magneto-anisotropy of electron spin dephasing in a high-mobility two-dimensional electron system in a $[001]$ GaAs/AlGaAs quantum well
• Higher order contributions to Rashba and Dresselhaus effects

Cited by in corpus (23)

• Spin dynamics in semiconductors
• Persistent Spin Textures in Semiconductor Nanostructures
• Semiconductor Spin Noise Spectroscopy: Fundamentals, Accomplishments, and Challenges
• Enhanced spin-orbit coupling in core/shell nanowires
• Anisotropic spin relaxation revealed by resonant spin amplification in (110) GaAs quantum wells
• Duality of the spin and density dynamics for two-dimensional electrons with a spin-orbit coupling
• Spin orientation by electric current in (110) quantum wells
• Spin dephasing and photoinduced spin diffusion in high-mobility 110-grown GaAs-AlGaAs two-dimensional electron systems
• Spin relaxation in multiple (110) quantum wells
• Spin relaxation due to random Rashba spin-orbit coupling in GaAs (110) quantum wells
• Spin polarization, dephasing and photoinduced spin diffusion in (110)-grown two-dimensional electron systems
• Electron g-Factor Anisotropy in Symmetric (110)-oriented GaAs Quantum Wells
• Enhanced longevity of the spin helix in low-symmetry quantum wells
• Effect of Dresselhaus spin-orbit coupling on spin dephasing in asymmetric and macroscopically symmetric (110)-grown quantum wells
• Hole spin relaxation in $p$-type (111) GaAs quantum wells
• Spin splitting of electron states in lattice-mismatched (110)-oriented quantum wells
• Spin noise at electron paramagnetic resonance
• Magnetic Field Effect on Electron Spin Dynamics in (110) GaAs Quantum wells
• Limitation of electron mobility from hyperfine interaction in ultra-clean quantum wells and topological insulators
• Spin currents of exciton polaritons in a microcavity with (110)-oriented quantum well
• Electron spin dephasing in two-dimensional systems with anisotropic scattering
• Nonlinear spin Hall effect in GaAs (110) quantum wells
• Electron g-factor determined for quantum dot circuit fabricated from (110)-oriented GaAs quantum well