Electric control of spin transport in GaAs (111) quantum wells

Abstract

We show by spatially and time-resolved photoluminescence that the application of an electric field transverse to the plane of an intrinsic GaAs (111) quantum well (QW) allows the transport of photogenerated electron spins polarized along the direction perpendicular to the QW plane over distances exceeding 10~$\mu$m. We attribute the long spin transport lengths to the compensation of the in-plane effective magnetic field related to the intrinsic spin-orbit (SO) interaction by means of the electrically generated SO-field. Away from SO-compensation, the precession of the spin vector around the SO-field decreases the out-of-plane polarization of the spin ensemble as the electrons move away from the laser generation spot. The results are reproduced by a model for two-dimensional drift-diffusion of spin polarized charge carriers under weak SO-interaction.

References in corpus (10)

• An Exact SU(2) Symmetry and Persistent Spin Helix in a Spin-Orbit Coupled System
• Emergence of the persistent spin helix in semiconductor quantum wells
• Direct mapping of the formation of a persistent spin helix: Supplementary information
• Localization-Delocalization Transition of Indirect Excitons in Lateral Electrostatic Lattices
• Suppression of the D'yakonov-Perel' spin relaxation mechanism for all spin components in [111] zincblende quantum wells
• Ambipolar spin diffusion and D'yakonov-Perel' spin relaxation in GaAs quantum wells
• Suppressed decay of a laterally confined persistent spin helix
• Spin dephasing and photoinduced spin diffusion in high-mobility 110-grown GaAs-AlGaAs two-dimensional electron systems
• Spin relaxation in $n$-type (111) GaAs quantum wells
• Electrical suppression of spin relaxation in GaAs(111)B Quantum Wells

Cited by in corpus (2)

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