A virtual intersubband spin-flip spin-orbit coupling induced spin relaxation in GaAs (110) quantum wells
arXiv:0907.2092 · doi:10.1016/j.ssc.2009.08.015
Abstract
A spin relaxation mechanism is proposed based on a second-order spin-flip intersubband spin-orbit coupling together with the spin-conserving scattering. The corresponding spin relaxation time is calculated via the Fermi golden rule. It is shown that this mechanism is important in symmetric GaAs (110) quantum wells with high impurity density. The dependences of the spin relaxation time on electron density, temperature and well width are studied with the underlying physics analyzed.
4+ pages, 4 figures, to be published in Solid Stat. Commun
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Cited by in corpus (7)
- Spin dynamics in semiconductors
- Semiconductor Spin Noise Spectroscopy: Fundamentals, Accomplishments, and Challenges
- Spin relaxation in multiple (110) quantum wells
- Spin relaxation due to random Rashba spin-orbit coupling in GaAs (110) quantum wells
- Spin relaxation in -type (111) GaAs quantum wells
- Nonlinear spin Hall effect in GaAs (110) quantum wells
- Spin relaxation in a zinc-blende (110) symmetric quantum well with delta-doping