Electron-electron scattering effect on spin relaxation in multi-valley nanostructures
arXiv:0905.4393 · doi:10.1209/0295-5075/87/57005
Abstract
We develop a theory of effects of electron-electron collisions on the Dyakonov-Perel' spin relaxation in multi-valley quantum wells. It is shown that the electron-electron scattering rate which governs the spin relaxation is different from that in a single-valley system. The theory is applied to Si/SiGe (001)-grown quantum wells where two valleys are simultaneously populated by free carriers. The dependences of the spin relaxation rate on temperature, electron concentration and valley-orbit splitting are calculated and discussed. We demonstrate that in a wide range of temperatures the electron-electron collisions can govern spin relaxation in high-quality Si/SiGe quantum wells.
6 pages, 4 figures, EPL style, revised version
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