Electric field effect on electron spin splitting in SiGe/Si quantum wells

Abstract

Effect of electric field on spin splitting in SiGe quantum wells (QWs) has been studied theoretically. Microscopical calculations of valley and spin splittings are performed in the effective $s{p}^3{d}^5{s}^{\ast }$ tight-binding model. The splittings oscillate as a function of the QW width due to inter-valley reflection of the electron wave off the interfaces. In accordance with the symmetry considerations additional electric-field-induced terms appear in the electron spin-dependent Hamiltonian. The oscillations of splitting are suppressed in rather low electric fields. The tight-binding calculations have been analyzed by using the envelope function approach extended to asymmetrical QWs.

8 pages, 3 figures

References in corpus (8)

• Valley Splitting Theory of SiGe/Si/SiGe Quantum Wells
• Spin and valley-orbit splittings in SiGe/Si heterostructures
• Spin Splitting in Symmetrical SiGe Quantum Wells
• Spin relaxation in (110) and (001) InAs/GaSb superlattices
• Magnetic field effects on spin relaxation in heterostructures
• Tetragonal and trigonal deformations in zinc-blende semiconductors : a tight-binding point of view
• Intervalley splitting and intersubband transitions in n-type Si/SiGe quantum wells: pseudopotential vs. effective mass calculation
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Cited by in corpus (47)

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• The germanium quantum information route
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• Blueprint of a scalable spin qubit shuttle device for coherent mid-range qubit transfer in disordered Si/SiGe/SiO${}_2$
• Valley dependent anisotropic spin splitting in silicon quantum dots
• Self-controlled growth of highly uniform Ge/Si hut wires for scalable qubit devices
• Interface induced spin-orbit interaction in silicon quantum dots and prospects for scalability
• Electron g-factor of valley states in realistic silicon quantum dots
• Spin shuttling in a silicon double quantum dot
• Strong electron-electron interactions in Si/SiGe quantum dots
• Detuning Axis Pulsed Spectroscopy of Valley-Orbital States in Si/SiGe Quantum Dots
• Theory of Single Electron Spin Relaxation in Si/SiGe Lateral Coupled Quantum Dots
• Anisotropic g-Factor and Spin-Orbit Field in a Ge Hut Wire Double Quantum Dot
• Singlet-triplet relaxation in multivalley silicon single quantum dots
• Enhanced Valley Splitting in Si Layers with Oscillatory Ge Concentration
• Optimizing spin-orbit splittings in InSb Majorana nanowires
• Theory of Spin Relaxation in Two-Electron Lateral Coupled Si/SiGe Quantum Dots
• Impact of valley phase and splitting on readout of silicon spin qubits
• Linear-in-momentum spin orbit interactions in planar Ge/GeSi heterostructures and spin qubits
• Spin-orbit enhancement in Si/SiGe heterostructures with oscillating Ge concentration
• Phonon-assisted relaxation and decoherence of singlet-triplet qubits in Si/SiGe quantum dots
• Singlet-triplet relaxation in SiGe/Si/SiGe double quantum dots
• Effective one-band approach for the spin splittings in quantum wells
• Spin splitting of electron states in lattice-mismatched (110)-oriented quantum wells
• Valley degeneracy in biaxially strained aluminum arsenide quantum wells
• Giant Rashba spin splitting in strained KTaO3 ultrathin films for circular photogalvanic currents
• Energy spectra of three electrons in Si/SiGe single and vertically coupled double quantum dots
• An upper and lower bound to the orientation-dependent linear Rashba spin-orbit coupling of two-dimensional hole gases in semiconductor quantum wells
• Valley splitting in a Si/SiGe quantum point contact
• Energy spectra of three electrons in SiGe/Si/SiGe laterally coupled triple quantum dots
• Valley and spin splittings in PbSe nanowires
• Electron-electron scattering effect on spin relaxation in multi-valley nanostructures
• Low-symmetry nanowire cross-sections for enhanced Dresselhaus spin-orbit interaction
• Impurity-driven intervalley spin-flip scattering-induced 2D spin relaxation in silicon
• Electron density effect on spin-orbit interaction in [001] GaAs quantum wells
• Spin relaxation of a donor electron coupled to interface states
• Leakage and dephasing in ${}^{28}$Si-based exchange-only spin qubits
• Measurement of enhanced spin-orbit coupling strength for donor-bound electron spins in silicon
• Electrical Interconnects for Silicon Spin Qubits
• Fine structure of neutral acceptor states of isolated impurity in zinc-blende semiconductors
• Theory for electron and hole fine structure and Landé g-factors in lead chalcogenide nanowires
• Fabrication, characterization and mechanical loading of Si/SiGe membranes for spin qubit devices