Density dependence of spin relaxation in GaAs quantum well at room temperature

Abstract

Carrier density dependence of electron spin relaxation in an intrinsic GaAs quantum well is investigated at room temperature using time-resolved circularly polarized pump-probe spectroscopy. It is revealed that the spin relaxation time first increases with density in the relatively low density regime where the linear D'yakonov-Perel' spin-orbit coupling terms are dominant, and then tends to decrease when the density is large and the cubic D'yakonov-Perel' spin-orbit coupling terms become important. These features are in good agreement with theoritical predictions by Lü {\em et al.} [Phys. Rev. B {\bf 73}, 125314 (2006)]. A fully microscopic calculation based on numerically solving the kinetic spin Bloch equations with both the D'yakonov-Perel' and the Bir-Aronov-Pikus mechanisms included, reproduces the density dependence of spin relaxation very well.

4 pages, 2 figures, Europhys. Lett., in press

References in corpus (3)

• Effect of initial spin polarization on spin dephasing and electron g factor in a high-mobility two-dimensional electron system
• Multi-subband effect in spin dephasing in semiconductor quantum wells
• Spin relaxation due to the Bir-Aronov-Pikus mechanism in intrinsic and $p$-type GaAs quantum wells from a fully microscopic approach

Cited by in corpus (5)

• Electron spin relaxation in bulk III-V semiconductors from a fully microscopic kinetic spin Bloch equation approach
• Electron spin relaxation in paramagnetic Ga(Mn)As quantum wells
• Hole spin relaxation in intrinsic and $p$-type bulk GaAs
• Spin diffusion in Si/SiGe quantum wells: spin relaxation in the absence of D'yakonov-Perel' relaxation mechanism
• Comment on "Density dependence of electron-spin polarization and relaxation in intrinsic GaAs at room temperature"