Density dependence of spin relaxation in GaAs quantum well at room temperature

Abstract

Carrier density dependence of electron spin relaxation in an intrinsic GaAs quantum well is investigated at room temperature using time-resolved circularly polarized pump-probe spectroscopy. It is revealed that the spin relaxation time first increases with density in the relatively low density regime where the linear D'yakonov-Perel' spin-orbit coupling terms are dominant, and then tends to decrease when the density is large and the cubic D'yakonov-Perel' spin-orbit coupling terms become important. These features are in good agreement with theoritical predictions by Lü {\em et al.} [Phys. Rev. B {\bf 73}, 125314 (2006)]. A fully microscopic calculation based on numerically solving the kinetic spin Bloch equations with both the D'yakonov-Perel' and the Bir-Aronov-Pikus mechanisms included, reproduces the density dependence of spin relaxation very well.

arXiv comment4 pages, 2 figures, Europhys. Lett., in press

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• Hole spin relaxation in intrinsic and $p$-type bulk GaAs
• Spin relaxation due to random Rashba spin-orbit coupling in GaAs (110) quantum wells
• Temperature and Electron Density Dependence of Spin Relaxation in GaAs/AlGaAs Quantum Well
• Spin diffusion in Si/SiGe quantum wells: spin relaxation in the absence of D'yakonov-Perel' relaxation mechanism
• Femtosecond Laser-induced Crystallization of Amorphous Sb2Te3 film and Coherent Phonon Spectroscopy Characterization and Optical Injection of Electron Spins
• Electron spin relaxation in $p$-type GaAs quantum wells
• Comment on "Density dependence of electron-spin polarization and relaxation in intrinsic GaAs at room temperature"