Comment on "Density dependence of electron-spin polarization and relaxation in intrinsic GaAs at room temperature"

Abstract

We comment on the conclusion by Teng et al. [J. Phys. D: Appl. Phys. {\bf 42}, 135111 (2009)] that the Bir-Aronov-Pikus mechanism is more important than the D'yakonov-Perel' mechanism at high carrier density in intrinsic bulk GaAs. We point out that the spin relaxation is solely from the D'yakonov-Perel' mechanism.

2 pages, one figure

References in corpus (7)

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• High temperature spin dephasing in n-typed GaAs quantum wells
• Effect of initial spin polarization on spin dephasing and electron g factor in a high-mobility two-dimensional electron system
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• Density dependence of spin relaxation in GaAs quantum well at room temperature