Hole spin relaxation in intrinsic and $p$-type bulk GaAs

Abstract

We investigate hole spin relaxation in intrinsic and $p$-type bulk GaAs from a fully microscopic kinetic spin Bloch equation approach. In contrast to the previous study on hole spin dynamics, we explicitly include the intraband coherence and the nonpolar hole-optical-phonon interaction, both of which are demonstrated to be of great importance to the hole spin relaxation. The relative contributions of the D'yakonov-Perel' and Elliott-Yafet mechanisms on hole spin relaxation are also analyzed. In our calculation, the screening constant, playing an important role in the hole spin relaxation, is treated with the random phase approximation. In intrinsic GaAs, our result shows good agreement with the experiment data at room temperature, where the hole spin relaxation is demonstrated to be dominated by the Elliott-Yafet mechanism. We also find that the hole spin relaxation strongly depends on the temperature and predict a valley in the density dependence of the hole spin relaxation time at low temperature due to the hole-electron scattering. In $p$-type GaAs, we predict a peak in the spin relaxation time against the hole density at low temperature, which originates from the distinct behaviors of the screening in the degenerate and nondegenerate regimes. The competition between the screening and the momentum exchange during scattering events can also lead to a valley in the density dependence of the hole spin relaxation time in the low density regime. At high temperature, the effect of the screening is suppressed due to the small screening constant. Moreover, we predict a nonmonotonic dependence of the hole spin relaxation time on temperature associated with the screening together with the hole-phonon scattering. Finally, we find that the D'yakonov-Perel' mechanism can markedly contribute to the .... (omitted due to the limit of space)

11 pages, 7 figures, Phys. Rev. B, in press

References in corpus (11)

• Electron spin relaxation in bulk III-V semiconductors from a fully microscopic kinetic spin Bloch equation approach
• High temperature spin dephasing in n-typed GaAs quantum wells
• Ultrafast demagnetization in the sp-d model: a theoretical study
• Spin relaxation in $n$-type GaAs quantum wells from a full microscopic approach
• Spin-3/2 physics of semiconductor hole nanowires: Valence-band mixing and tunable interplay between bulk-material and orbital bound-state spin splittings
• Spin precession and alternating spin polarization in spin-3/2 hole systems
• Spin relaxation under identical Dresselhaus and Rashba coupling strengths in GaAs quantum wells
• Density dependence of spin relaxation in GaAs quantum well at room temperature
• Theoretical study of interacting hole gas in p-doped bulk III-V semiconductors
• Magnitude and crystalline anisotropy of hole magnetization in (Ga,Mn)As
• Hole spin relaxation in $p$-type GaAs quantum wires