Magnitude and crystalline anisotropy of hole magnetization in (Ga,Mn)As

Abstract

Theory of hole magnetization Mc in zinc-blende diluted ferromagnetic semiconductors is developed relaxing the spherical approximation of earlier approaches. The theory is employed to determine Mc for (Ga,Mn)As over a wide range of hole concentrations and a number of crystallographic orientations of Mn magnetization. It is found that anisotropy of Mc is practically negligible but the obtained magnitude of Mc is significantly greater than that determined in the spherical approximation. Its sign and value compares favorably with the results of available magnetization measurements and ferromagnetic resonance studies.

5 pages, 3 figures

References in corpus (1)

• Theory of ferromagnetic (III,Mn)V semiconductors

Cited by in corpus (6)

• Origin and control of ferromagnetism in dilute magnetic semiconductors and oxides
• Magnetic anisotropy of epitaxial (Ga,Mn)As on (113)A GaAs
• Theory of spin waves in ferromagnetic (Ga,Mn)As
• Hole spin relaxation in intrinsic and $p$-type bulk GaAs
• Valence band orbital polarization in III-V ferromagnetic semiconductors
• Thermodynamic and thermoelectric properties of (Ga,Mn)As and related compounds