Origin and control of ferromagnetism in dilute magnetic semiconductors and oxides
arXiv:0711.0343 · doi:10.1063/1.2832613
Abstract
The author reviews the present understanding of the hole-mediated ferromagnetism in magnetically doped semiconductors and oxides as well as the origin of high temperature ferromagnetism in materials containing no valence band holes. It is argued that in these systems spinodal decomposition into regions with a large and a small concentration of magnetic component takes place. This self-organized assembling of magnetic nanocrystals can be controlled by co-doping and growth conditions. Functionalities of these multicomponent systems are described together with prospects for their applications in spintronics, nanoelectronics, photonics, plasmonics, and thermoelectrics.
review, 7 pages, 52nd MMM Conference, Tampa Nov. 2007, J. Appl. Phys, in press
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Cited by in corpus (6)
- Controlled aggregation of magnetic ions in a semiconductor. Experimental demonstration
- Optimization of Mn Doping in Group-IV-based Dilute Magnetic Semiconductors by Electronic Co-dopants
- Ferromagnetic ordering in dilute magnetic dielectrics with and without free carriers
- Magnetic circular dichroism in GaMnAs: (no) evidence for an impurity band
- Structural properties of CoTiSi films on GaAs(001)
- From narrow-gap and semimagnetic semiconductors to spintronics and topological matter: a life with spins