Origin of ferromagnetic response in diluted magnetic semiconductors and oxides

Abstract

This paper reviews the present understanding of the origin of ferromagnetic response of diluted magnetic semiconductors and diluted magnetic oxides as well as in some nominally magnetically undoped materials. It is argued that these systems can be grouped into four classes. To the first belong composite materials in which precipitations of a known ferromagnetic, ferrimagnetic or antiferromagnetic compound account for magnetic characteristics at high temperatures. The second class forms alloys showing chemical nano-scale phase separation into the regions with small and large concentrations of the magnetic constituent. To the third class belong (Ga,Mn)As, heavily doped p-(Zn,Mn)Te, and related semiconductors. In these solid solutions the theory built on p-d Zener's model of hole-mediated ferromagnetism and on either the Kohn-Luttinger kp theory or the multi-orbital tight-binding approach describes qualitatively, and often quantitatively many relevant properties. Finally, in a number of carrier-doped DMS and DMO a competition between long-range ferromagnetic and short-range antiferromagnetic interactions and/or the proximity of the localisation boundary lead to an electronic nano-scale phase separation.

review, 19 pages, 4 figures

References in corpus (3)

• Theory of ferromagnetic (III,Mn)V semiconductors
• Probing hole-induced ferromagnetic exchange in magnetic semiconductors by inelastic neutron scattering
• Monte Carlo simulations of ferromagnetism in p-CdMnTe quantum wells

Cited by in corpus (5)

• On the character of states near the Fermi level in (Ga,Mn)As: impurity to valence band crossover
• Origin and control of ferromagnetism in dilute magnetic semiconductors and oxides
• Using x-ray diffraction to identify precipitates in transition metal doped semiconductors
• Impurity states in the magnetic topological insulator V:(Bi,Sb)${}_2$Te${}_3$
• Carrier density dependence of the magnetic properties in iron-doped Bi2Se3 topological insulator