Carrier density dependence of the magnetic properties in iron-doped Bi2Se3 topological insulator

Abstract

The electronic and magnetic properties of iron-doped topological insulator Bi1.84-xFe0.16CaxSe3 single crystals were studied. By co-doping Fe and Ca atoms, ferromagnetic bulk states with different carrier density (from n-type to p-type) were obtained. Effective magnetic moments for each Fe atom was estimated as small as about 0.07$\mu$B. Magnetic and non-magnetic phases separation was observed in all samples. Our results suggest that the bulk ferromagnetism in Fe-doped Bi2Se3 is not intrinsic and regardless of carrier density.

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Cited by in corpus (5)

• Systematics of electronic and magnetic properties in the transition metal doped Sb${}_2$Te${}_3$ quantum anomalous Hall platform
• Magnetic proximity effect at Bi${}_2$Se${}_3$/EuS interface with broken inversion symmetry
• Solution to the hole-doping problem and tunable quantum Hall effect in Bi${}_2$Se${}_3$ thin films
• Structural and magneto-transport studies of iron intercalated Bi2Se3 single crystals
• Exploring Structural and Electronic Properties of Topological Insulator/Graphene Nano-heterostructures