Carrier density dependence of the magnetic properties in iron-doped Bi2Se3 topological insulator

Abstract

The electronic and magnetic properties of iron-doped topological insulator Bi1.84-xFe0.16CaxSe3 single crystals were studied. By co-doping Fe and Ca atoms, ferromagnetic bulk states with different carrier density (from n-type to p-type) were obtained. Effective magnetic moments for each Fe atom was estimated as small as about 0.07$\mu$B. Magnetic and non-magnetic phases separation was observed in all samples. Our results suggest that the bulk ferromagnetism in Fe-doped Bi2Se3 is not intrinsic and regardless of carrier density.

References in corpus (11)

• Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
• Quantum Spin Hall Insulator State in HgTe Quantum Wells
• Topological Insulators with Inversion Symmetry
• Discovery (theoretical prediction and experimental observation) of a large-gap topological-insulator class with spin-polarized single-Dirac-cone on the surface
• A topological Dirac insulator in a quantum spin Hall phase : Experimental observation of first strong topological insulator
• Quantized Anomalous Hall Effect in Magnetic Topological Insulators
• Theory of ferromagnetic (III,Mn)V semiconductors
• The development of ferromagnetism in the doped topological insulator Bi2-xMnxTe3
• Half-Heusler Compounds as a New Class of Three-Dimensional Topological Insulators
• Origin of ferromagnetic response in diluted magnetic semiconductors and oxides
• The Nature of Magnetic Ordering in Magnetically Doped Topological Insulator Bi${}_{2-x}$Fe${}_x$Se${}_3$

Cited by in corpus (4)

• Magnetic proximity effect at Bi${}_2$Se${}_3$/EuS interface with broken inversion symmetry
• Solution to the hole-doping problem and tunable quantum Hall effect in Bi${}_2$Se${}_3$ thin films
• Structural and magneto-transport studies of iron intercalated Bi2Se3 single crystals
• Exploring Structural and Electronic Properties of Topological Insulator/Graphene Nano-heterostructures