Solution to the hole-doping problem and tunable quantum Hall effect in Bi${}_2$Se${}_3$ thin films

Abstract

Bi${}_2$Se${}_3$, one of the most widely studied topological insulators (TIs), is naturally electron-doped due to n-type native defects. However, many years of efforts to achieve p-type Bi${}_2$Se${}_3$ thin films have failed so far. Here, we provide a solution to this long-standing problem, showing that the main culprit has been the high density of interfacial defects. By suppressing these defects through an interfacial engineering scheme, we have successfully implemented p-type Bi${}_2$Se${}_3$ thin films down to the thinnest topological regime. On this platform, we present the first tunable quantum Hall effect (QHE) study in Bi${}_2$Se${}_3$ thin films, and reveal not only significantly asymmetric QHE signatures across the Dirac point but also the presence of competing anomalous states near the zeroth Landau level. The availability of doping tunable Bi${}_2$Se${}_3$ thin films will now make it possible to implement various topological quantum devices, previously inaccessible.

40 Pages, 8 Figures, 2 Tables, Accepted to Nano Letters

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Cited by in corpus (19)

• Transport in two-dimensional topological materials: recent developments in experiment and theory
• A perspective on topological nanophotonics: current status and future challenges
• Record-High Proximity-Induced Anomalous Hall Effect in (Bi${}_x$Sb${}_{1-x}$)2Te${}_3$ Thin Film Grown on CrGeTe${}_3$ Substrate
• Semiconductor materials stacks for quantum dot spin qubits
• Bulk-Free Topological Insulator Bi2Se3 nanoribbons with Magnetotransport Signatures of Dirac Surface States
• Quantum-Hall to Insulator Transition in Ultra-low-carrier-density Topological Insulator Films and a Hidden Phase of the Zeroth Landau Level
• Ferromagnetic Anomalous Hall Effect in Cr-doped Bi${}_2$Se${}_3$ Thin Films via Surface-State Engineering
• Structurally and Chemically Compatible BiInSe3 Substrate for Topological Insulator Thin Films
• Carrier doping of Bi${}_2$Se${}_3$ surface by chemical adsorption -- a DFT study
• Effect of Sr doping on structure, morphology and transport properties of Bi${}_2$Se${}_3$ epitaxial thin films
• Suppressing carrier density in (BixSb1-x)2Te3 films using Cr2O3 interfacial layers
• Superconducting four-fold Fe(Te,Se) film on six-fold magnetic MnTe via hybrid symmetry epitaxy
• Engineering artificial topological phases via superlattices
• Spatial Control of Charge Doping in n-Type Topological Insulators
• Gate tunable quantum Hall effects in defect-suppressed Bi2Se3 films
• Pb-doped p-type Bi${}_2$Se${}_3$ thin films via interfacial engineering
• From classical to quantum regime of topological surface states via defect engineering
• Introduction of Sr into Bi2Se3 thin films by molecular beam epitaxy
• High and Magnetic-field-dependent Surface Carriers Mobility in 3D Topological Insulators without Bulk States