Carrier doping of Bi$_2$Se$_3$ surface by chemical adsorption -- a DFT study

Cheng Fan; Kazuyuki Sakamoto; Peter Krüger

doi:10.1016/j.apsusc.2023.158699

paper

Carrier doping of Bi $_{2}$ Se $_{3}$ surface by chemical adsorption -- a DFT study

arXiv:2310.14177 · doi:10.1016/j.apsusc.2023.158699

Abstract

Bi $_{2}$ Se $_{3}$ is one of the most promising topological insulators, but it suffers from intrinsic n-doping due to Se-vacancies, which shifts the Fermi level into the bulk conduction band, leading to topologically trivial carriers. Recently it was shown that this Fermi-level shift can be compensated by a locally controlled surface p-doping process, through water adsorption and XUV irradiation. Here, the microscopic mechanism of this surface doping is studied by means of density functional theory (DFT) focusing on the adsorption of H $_{2}$ O, OH, O, C and CH on Bi $_{2}$ Se $_{3}$ . We find that water adsorption has a negligible doping effect while hydroxyl groups lead to n-doping. Carbon adsorption on Se vacancies gives rise to p-doping but it also strongly modifies the electronic band structure around the Dirac point. Only if the Se vacancies are filled with atomic oxygen, the experimentally observed p-doping without change of the topological surface bands is reproduced. Based on the DFT results, we propose a reaction path where photon absorption gives rise to water splitting and the produced O atoms fill the Se vacancies. Adsorbed OH groups appear as intermediate states and carbon impurities may have a catalytic effect in agreement with experimental observations.

Carrier doping of Bi2​Se3​ surface by chemical adsorption -- a DFT study

Abstract

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Carrier doping of Bi $_{2}$ Se $_{3}$ surface by chemical adsorption -- a DFT study