Semiconductor materials stacks for quantum dot spin qubits

Abstract

In this perspective piece, I benchmark gallium arsenide, silicon, and germanium as material platforms for gate-defined quantum dot spin qubits. I focus on materials stacks, quantum dot architectures, bandstructure properties and qualifiers for disorder from electrical transport. This brief note is far from being exhaustive and should be considered a first introduction to the materials challenges and opportunities towards a larger spin qubit quantum processor.

An edited version of this manuscript will appear as an article section in MRS Bulletin

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Cited by in corpus (11)

• Probing single electrons across 300 mm spin qubit wafers
• Low disorder and high valley splitting in silicon
• Electrical control of uniformity in quantum dot devices
• Utilizing multimodal microscopy to reconstruct Si/SiGe interfacial atomic disorder and infer its impacts on qubit variability
• Understanding disorder in Silicon quantum computing platforms: Scattering mechanisms in Si/SiGe quantum wells
• Topological phase transition in commensurate multi-frequency Floquet Su-Schrieffer-Heeger model
• High quality CVD deposition of Ge layers for Ge/SiGe Quantum Well heterostructures
• Artificial Intelligence-Assisted Workflow for Transmission Electron Microscopy: From Data Analysis Automation to Materials Knowledge Unveiling
• Variability of hole spin qubits in planar Germanium
• Topological advantage for adsorbate chemisorption on conjugated chains
• Anomalous zero-field splitting for hole spin qubits in Si and Ge quantum dots