Interfacing topological insulators and ferrimagnets: BiTe and FeO heterostructures grown by molecular beam epitaxy
arXiv:2006.14914 · doi:10.1063/5.0010339
Abstract
Relying on the magnetism induced by the proximity effect in heterostructures of topological insulators and magnetic insulators is one of the promising routes to achieve the quantum anomalous Hall effect. Here we investigate heterostructures of BiTe and FeO. By growing two different types of heterostructures by molecular beam epitaxy, FeO on BiTe and BiTe on FeO, we explore differences in chemical stability, crystalline quality, electronic structure, and transport properties. We find the heterostructure BiTe on FeO to be a more viable approach, with transport signatures in agreement with a gap opening in the topological surface states.
arXiv commentaccepted for publication in APL Materials
References in corpus (20)
- Topological Insulators in Three Dimensions
- Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator
- High-precision realization of robust quantum anomalous Hall state in a hard ferromagnetic topological insulator
- Hexagonal Warping Effects in the Surface States of Topological Insulator BiTe
- A topological insulator surface under strong Coulomb, magnetic and disorder perturbations
- Impurity effect on weak anti-localization in the topological insulator Bi2Te3
- Magnetic modulation doping in topological insulators toward higher-temperature quantum anomalous Hall effect
- Competition between weak localization and antilocalization in topological surface states
- Weak localization of bulk channels in topological insulator thin film
- Above 400 K Robust Perpendicular Ferromagnetic Phase in a Topological Insulator
- In-plane Magnetization Induced Quantum Anomalous Hall Effect
- In-plane magnetic anisotropy of Fe atoms on BiSe(111)
- Emergence of decoupled surface transport channels in bulk insulating Bi2Se3 thin films
- Intrinsic conduction through topological surface states of insulating BiTe epitaxial thin films
- Growth and Characterization of Hybrid Insulating Ferromagnet-Topological Insulator Heterostructure Devices
- Verwey transition in FeO thin films: Influence of oxygen stoichiometry and substrate-induced microstructure
- Fe3O4 thin films: controlling and manipulating an elusive quantum material
- Protective capping of topological surface states of intrinsically insulating BiTe
- Defect induced negative magnetoresistance and surface state immunity in topological insulator BiSbTeSe2
- Evidence for exchange Dirac gap in magneto-transport of topological insulator-magnetic insulator heterostructures