Molecular Beam Epitaxy of thin HfTe2 semimetal films

Abstract

Epitaxial thin films of 1T-HfTe2 semimetal are grown by MBE on AlN(0001) substrates. The measured in-plane lattice parameter indicates an unstrained film which is also azimuthally aligned with the AlN substrate, albeit with an in-plane mosaic spread, as it would be expected for van der Waals epitaxy. Angle resolved photoemission spectroscopy combined with first principles electronic band structure calculations show steep linearly dispersing conduction and valence bands which cross near the Brillouin zone center, providing evidence that HfTe2 /AlN is an epitaxial topological Dirac semimetal.

Cited by in corpus (5)

• First-principles study of mechanical and electronic properties of bent monolayer transition metal dichalcogenides
• Dimensionality reduction and band quantization induced by potassium intercalation in 1$T$-HfTe${}_2$
• Observation of possible excitonic charge density waves and metal-insulator transitions in atomically thin semimetals
• Electronic structure of 2D van der Waals crystals and heterostructures investigated by spatially- and angle-resolved photoemission
• Shubnikov-de Haas oscillations and planar Hall effect in HfTe2