activity
20122023
most citedMolecular Beam Epitaxy of thin HfTe2 semimetal films

60 citations · 172 across the 6 of their papers we have counts for

collaborators

6 papers

cond-mat.mtrl-sci2023

Engineering heat transport across epitaxial lattice-mismatched van der Waals heterointerfaces

Emigdio Chavez-Angel, Polychronis Tsipas, Peng Xiao +6

Artificially engineered 2D materials offer unique physical properties for thermal management, surpassing naturally occurring materials. Here, using van der Waals epitaxy, we demons…

cs.ET2021★ 16 cited

Ferroelectric Tunneling Junctions for Edge Computing

Erika Covi, Quang T. Duong, Suzanne Lancaster +10

Ferroelectric tunneling junctions (FTJ) are considered to be the intrinsically most energy efficient memristors. In this work, specific electrical features of ferroelectric hafnium…

cond-mat.mtrl-sci2021★ 45 cited

Large spin-to-charge conversion at room temperature in extended epitaxial Sb2Te3 topological insulator chemically grown on Silicon

Emanuele Longo, Matteo Belli, Mario Alia +8

Spin-charge interconversion phenomena at the interface between magnetic materials and topological insulators (TIs) are attracting enormous interest in the research effort towards t…

physics.app-ph2019★ 27 cited

Surface-Enhanced Raman Spectroscopy of Graphene Integrated in Plasmonic Silicon Platforms with Three-Dimensional Nanotopography

Maria Kanidi, Alva Dagkli, Nikolaos Kelaidis +8

Integrating graphene with plasmonic nanostructures results in multifunctional hybrid systems with enhanced performance for numerous applications. In this work, we take advantage of…

cond-mat.mtrl-sci2016★ 60 cited

Molecular Beam Epitaxy of thin HfTe2 semimetal films

Sigiava Aminalragia-Giamini, Jose Marquez-Velasco, Polychronis Tsipas +3

Epitaxial thin films of 1T-HfTe2 semimetal are grown by MBE on AlN(0001) substrates. The measured in-plane lattice parameter indicates an unstrained film which is also azimuthally…

cond-mat.mtrl-sci2012★ 24 cited

Gate Stack Dielectric Degradation of Rare-Earth Oxides Grown on High Mobility Ge Substrates

Md. Shahinur Rahman, Evangelos K. Evangelou, Nikos Konofaos +1

We report on the dielectric degradation of Rare-Earth Oxides (REOs), when used as interfacial buffer layers together with HfO2 high-k films (REOs/HfO2) on high mobility Ge substrat…