Ferroelectric Tunneling Junctions for Edge Computing
arXiv:2107.01853 · doi:10.1109/ISCAS51556.2021.9401800
Abstract
Ferroelectric tunneling junctions (FTJ) are considered to be the intrinsically most energy efficient memristors. In this work, specific electrical features of ferroelectric hafnium-zirconium oxide based FTJ devices are investigated. Moreover, the impact on the design of FTJ-based circuits for edge computing applications is discussed by means of two example circuits.
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Cited by in corpus (4)
- Investigating charge trapping in ferroelectric thin films through transient measurements
- A multi-pulse wakeup scheme for on-chip operation of devices based on ferroelectric doped HfO2 thin films
- Improvement of FTJ on-current by work function engineering for massive parallel neuromorphic computing
- A 120dB Programmable-Range On-Chip Pulse Generator for Characterizing Ferroelectric Devices