151 citations · 705 across the 22 of their papers we have counts for
22 papers
A multi-pulse wakeup scheme for on-chip operation of devices based on ferroelectric doped HfO2 thin films
Suzanne Lancaster, Thomas Mikolajick, Stefan Slesazeck
A wakeup scheme for ferroelectric thin HfZrO films is presented, based on a gradual switching approach using multiple short pulses with a voltage amplitude roug…
A Ferroelectric Tunnel Junction-based Integrate-and-Fire Neuron
Paolo Gibertini, Luca Fehlings, Suzanne Lancaster +6
Event-based neuromorphic systems provide a low-power solution by using artificial neurons and synapses to process data asynchronously in the form of spikes. Ferroelectric Tunnel Ju…
Improvement of FTJ on-current by work function engineering for massive parallel neuromorphic computing
Suzanne Lancaster, Quang T. Duong, Erika Covi +2
HfO2-based ferroelectric tunnel junctions (FTJs) exhibit attractive properties for adoption in neuromorphic applications. The combination of ultra-low-power multi-level switching c…
Optimizing nucleation layers for the integration of ferroelectric HZO on CVD-grown graphene
Suzanne Lancaster, Iciar Arnay, Ruben Guerrero +4
Direct integration of ferroelectric Hf0.5Zr0.5O2 (HZO) on the inert surface of graphene is challenging. Here, using nucleation layers to promote atomic layer deposition of HZO was…
Investigating charge trapping in ferroelectric thin films through transient measurements
Suzanne Lancaster, Patrick D Lomenzo, Moritz Engl +4
A measurement technique is presented to quantify the polarization loss in ferroelectric thin films as a function of delay time during the first 100s after switching. This technique…
C-AND: Mixed Writing Scheme for Disturb Reduction in 1T Ferroelectric FET Memory
Mor M. Dahan, Evelyn T. Breyer, Stefan Slesazeck +2
Ferroelectric field effect transistor (FeFET) memory has shown the potential to meet the requirements of the growing need for fast, dense, low-power, and non-volatile memories. In…