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20112023
most citedHafnia-based Double Layer Ferroelectric Tunnel Junctions as Artificial Synapses for Neuromorphic Computing

151 citations · 705 across the 22 of their papers we have counts for

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Showing 2022Show all

6 papers · 1 filter

cs.ET2022★ 9 cited

A Ferroelectric Tunnel Junction-based Integrate-and-Fire Neuron

Paolo Gibertini, Luca Fehlings, Suzanne Lancaster +6

Event-based neuromorphic systems provide a low-power solution by using artificial neurons and synapses to process data asynchronously in the form of spikes. Ferroelectric Tunnel Ju…

physics.app-ph2022★ 10 cited

Improvement of FTJ on-current by work function engineering for massive parallel neuromorphic computing

Suzanne Lancaster, Quang T. Duong, Erika Covi +2

HfO2-based ferroelectric tunnel junctions (FTJs) exhibit attractive properties for adoption in neuromorphic applications. The combination of ultra-low-power multi-level switching c…

cond-mat.mtrl-sci2022

Optimizing nucleation layers for the integration of ferroelectric HZO on CVD-grown graphene

Suzanne Lancaster, Iciar Arnay, Ruben Guerrero +4

Direct integration of ferroelectric Hf0.5Zr0.5O2 (HZO) on the inert surface of graphene is challenging. Here, using nucleation layers to promote atomic layer deposition of HZO was…

cond-mat.mtrl-sci2022★ 48 cited

Investigating charge trapping in ferroelectric thin films through transient measurements

Suzanne Lancaster, Patrick D Lomenzo, Moritz Engl +4

A measurement technique is presented to quantify the polarization loss in ferroelectric thin films as a function of delay time during the first 100s after switching. This technique…

eess.SY2022★ 15 cited

C-AND: Mixed Writing Scheme for Disturb Reduction in 1T Ferroelectric FET Memory

Mor M. Dahan, Evelyn T. Breyer, Stefan Slesazeck +2

Ferroelectric field effect transistor (FeFET) memory has shown the potential to meet the requirements of the growing need for fast, dense, low-power, and non-volatile memories. In…

cs.ET2022★ 2 cited

A 120dB Programmable-Range On-Chip Pulse Generator for Characterizing Ferroelectric Devices

Shyam Narayanan, Erika Covi, Viktor Havel +7

Novel non-volatile memory devices based on ferroelectric thin films represent a promising emerging technology that is ideally suited for neuromorphic applications. The physical swi…