151 citations · 705 across the 22 of their papers we have counts for
6 papers · 1 filter
Towards Non-Volatile Spin Orbit Devices: Deposition of Ferroelectric Hafnia on Monolayer Graphene/Co/HM Stacks
Suzanne Lancaster, Iciar Arnay, Ruben Guerrero +10
Although technologically challenging, the integration of ferroelectric thin films with graphene spintronics potentially allows the realization of highly efficient, electrically tun…
Ferroelectric Tunneling Junctions for Edge Computing
Erika Covi, Quang T. Duong, Suzanne Lancaster +10
Ferroelectric tunneling junctions (FTJ) are considered to be the intrinsically most energy efficient memristors. In this work, specific electrical features of ferroelectric hafnium…
Hafnia-based Double Layer Ferroelectric Tunnel Junctions as Artificial Synapses for Neuromorphic Computing
Benjamin Max, Michael Hoffmann, Halid Mulaosmanovic +2
Ferroelectric tunnel junctions (FTJ) based on hafnium zirconium oxide (Hf1-xZrxO2; HZO) are a promising candidate for future applications, such as low-power memories and neuromorph…
2022 Roadmap on Neuromorphic Computing and Engineering
Dennis V. Christensen, Regina Dittmann, Bernabé Linares-Barranco +56
Modern computation based on the von Neumann architecture is today a mature cutting-edge science. In the Von Neumann architecture, processing and memory units are implemented as sep…
Antiferroelectric negative capacitance from a structural phase transition in zirconia
Michael Hoffmann, Zheng Wang, Nujhat Tasneem +20
Crystalline materials with broken inversion symmetry can exhibit a spontaneous electric polarization, which originates from a microscopic electric dipole moment. Long-range polar o…
On the Performance of Dual-Gate Reconfigurable Nanowire Transistors
Bin Sun, Benjamin Richstein, Patrick Liebisch +5
We investigate the operation of dual-gate reconfigurable field-effect transistor (RFET) in the programgate at drain (PGAD) and program-gate at source (PGAS) configurations. To this…