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20112023
most citedHafnia-based Double Layer Ferroelectric Tunnel Junctions as Artificial Synapses for Neuromorphic Computing

151 citations · 705 across the 22 of their papers we have counts for

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Showing cond-mat.mtrl-sciShow all

10 papers · 1 filter

cond-mat.mtrl-sci2022

Optimizing nucleation layers for the integration of ferroelectric HZO on CVD-grown graphene

Suzanne Lancaster, Iciar Arnay, Ruben Guerrero +4

Direct integration of ferroelectric Hf0.5Zr0.5O2 (HZO) on the inert surface of graphene is challenging. Here, using nucleation layers to promote atomic layer deposition of HZO was…

cond-mat.mtrl-sci2022★ 48 cited

Investigating charge trapping in ferroelectric thin films through transient measurements

Suzanne Lancaster, Patrick D Lomenzo, Moritz Engl +4

A measurement technique is presented to quantify the polarization loss in ferroelectric thin films as a function of delay time during the first 100s after switching. This technique…

cond-mat.mtrl-sci2021★ 13 cited

Towards Non-Volatile Spin Orbit Devices: Deposition of Ferroelectric Hafnia on Monolayer Graphene/Co/HM Stacks

Suzanne Lancaster, Iciar Arnay, Ruben Guerrero +10

Although technologically challenging, the integration of ferroelectric thin films with graphene spintronics potentially allows the realization of highly efficient, electrically tun…

cond-mat.mtrl-sci2021★ 64 cited

Antiferroelectric negative capacitance from a structural phase transition in zirconia

Michael Hoffmann, Zheng Wang, Nujhat Tasneem +20

Crystalline materials with broken inversion symmetry can exhibit a spontaneous electric polarization, which originates from a microscopic electric dipole moment. Long-range polar o…

cond-mat.mtrl-sci2017★ 4 cited

Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO

Everett D. Grimley, Tony Schenk, Thomas Mikolajick +2

Though the electrical responses of the various polymorphs found in ferroelectric polycrystalline thin film HfO are now well characterized, little is currently understood of thi…

cond-mat.mtrl-sci2017★ 51 cited

A computational study of hafnia-based ferroelectric memories: from ab initio via physical modeling to circuit models of ferroelectric device

Milan Pešić, Christopher Künneth, Michael Hoffmann +7

The discovery of ferroelectric properties of binary oxides revitalized the interest in ferroelectrics and bridged the scaling gap between the state-of-the-art semiconductor technol…